MATERIAL SYNTHESIS TECHNOLOGY BY MICROWAVE PLASMA TORCH WITH ATMOSPHERIC PRESSURE AND HIGH TEMPERATURE

Number of patents in Portfolio can not be more than 2000

United States of America

APP PUB NO 20220007488A1
SERIAL NO

17355259

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Abstract

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The invention is for a material synthesis technology by microwave plasma torch with atmospheric pressure and high temperature. It includes a plasma torch system with atmosphere pressure & high temperature and a material growth system. In the plasma torch system the cutting-edge breakdown happens by inputting the high power microwave. Then the stable plasma torch with atmosphere pressure & high temperature generates under the avalanche effect of the cutting-edge breakdown by the solid precursor at the open-end of the cylindrical metal tube or the precursor carrier gas through the cylindrical metal tube. The result is that the precursors are decomposed and generates the active particles for material growth. In the material growth system the motion and ingredients proportion of negative and positive ions or particles in the active particle beam are controlled by the adjustable static electric field generated by the metal ring and the igniting & control electrode connecting to the external adjustable DC source. And the material growth space is heated by the heating system for the material growth. Then the material controlled growth is implemented by the heating system and the adjustable static electrical field.

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Patent Owner(s)

Patent OwnerAddress
CHENGDU LANDMARKS TECHNOLOGY CO LTDCHENGDU

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Bai, Ye Chengdu, CN 21 85
Li, Dashuai Chengdu, CN 1 14

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