SiC EPITAXIAL GROWTH APPARATUS
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United States of America
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Issued Date -
Jan 6, 2022
app pub date -
Sep 16, 2021
filing date -
Sep 16, 2021
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Abstract
A SiC epitaxial growth apparatus according to an embodiment includes: a chamber into which a process gas at least containing silicon and carbon is introduced and housing a substrate to undergo epitaxial growth with the process gas; piping that discharges a gas containing a byproduct generated through epitaxial growth from the chamber; and a valve for pressure control in a middle of the piping. The valve has a flow inlet into which the gas flows from an upstream portion of the piping that causes the chamber and the valve to connect, and a flow outlet that allows the gas to flow out to a downstream portion of the piping that connects with the upstream portion via the valve. a part of the downstream portion is at a position lower than the flow outlet. The apparatus comprises a trap part being capable of collecting the byproduct at the downstream portion.
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