ENHANCED ROOM TEMPERATURE MID-IR LEDS WITH INTEGRATED SEMICONDUCTOR 'METALS'
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United States of America
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Dec 30, 2021
app pub date -
Jun 25, 2021
filing date -
Jun 25, 2021
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Abstract
Mid-IR light emitting diodes (LEDs) based on type-II quantum dot (QD) active regions grown with monolithically integrated semiconductor metal layers are provided. These LEDs comprise layers of type-II semiconductor (e.g., InGaSb) quantum dots integrated into a pn junction diode (e.g., InAs) grown above a highly doped backplane, such as an n++ InAs backplane, all in the same epitaxial growth. Aspects described herein minimize non-radiate recombination times and significantly increase radiative recombination rates by controlling the emission of the emitting QDs in the near field of an optical metal.
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