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• 15 United States
• 10 France
• 8 Japan
• 7 China
• 5 Korea
• 2 Other

Patent Owner(s)

Patent Owner	Address
TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD	HSINCHU

International Classification(s)

• H01L:SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICE....
• C25F:PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIAL....

Inventor(s)

Inventor Name	Address	# of filed Patents	Total Citations
LIAO, Han-Wen	Taichung City, TW	21	33
# of filed Patents : 21 Total Citations : 33
LU, Hong-Ting	Taichung City, TW	4	0
# of filed Patents : 4 Total Citations : 0

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• H01L Class

• 0 % this patent is cited more than
• 4 Age

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Maintenance Fees

Fee	Large entity fee	small entity fee	micro entity fee	due date
3.5 Year Payment	$1600.00	$800.00	$400.00	Jun 16, 2025
7.5 Year Payment	$3600.00	$1800.00	$900.00	Jun 16, 2029
11.5 Year Payment	$7400.00	$3700.00	$1850.00	Jun 16, 2033

Fee	Large entity fee	small entity fee	micro entity fee
Surcharge - 3.5 year - Late payment within 6 months	$160.00	$80.00	$40.00
Surcharge - 7.5 year - Late payment within 6 months	$160.00	$80.00	$40.00
Surcharge - 11.5 year - Late payment within 6 months	$160.00	$80.00	$40.00
Surcharge after expiration - Late payment is unavoidable	$700.00	$350.00	$175.00
Surcharge after expiration - Late payment is unintentional	$1,640.00	$820.00	$410.00

Full Text

US Patent Application No: 2021/0391,189

WET ETCH APPARATUS

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Abstract

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A wet etch apparatus includes a wafer chuck, a dispensing nozzle, a liquid etchant container, and an electric field generator. The dispensing nozzle is above the wafer chuck. The liquid etchant container is in fluid communication with the dispensing nozzle. The electric field generator is operative to generate an electric field across the wafer chuck. The electric field generator includes a first electrode and a second electrode spaced apart from the first electrode in a direction substantially perpendicular to a top surface of the wafer chuck, and the second electrode is an electrode plate above the wafer chuck.

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Description

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Claims

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