Semiconductor device
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United States of America Patent
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Jun 4, 2024
Grant Date -
Dec 2, 2021
app pub date -
Apr 29, 2021
filing date -
Apr 29, 2021
priority date (Note) -
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Abstract
The present invention provides a semiconductor device in which the contact resistance of the body electrode is reduced without reducing the channel mobility. The p-type layer is a Mg-doped p-GaN layer deposited on the first re-type layer. The p-type layer has a two-layer structure in which a first p-type layer and a second p-type layer are sequentially deposited. The second p-type layer has a Mg concentration higher than the Mg concentration of the first p-type layer. The recess is formed in a predetermined position on the surface of the second n-type layer, and has a depth passing through the second n-type layer and reaching the second p-type layer. The body electrode is formed on the bottom surface of the recess in contact with the p-type layer exposed thereon.
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