SEMICONDUCTOR EPITAXIAL WAFER AND METHOD OF PRODUCING SEMICONDUCTOR EPITAXIAL WAFER, AND METHOD OF PRODUCING SOLID-STATE IMAGING DEVICE
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United States of America Patent
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Nov 18, 2021
app pub date -
Jul 28, 2021
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Jul 20, 2017
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An epitaxial wafer that includes a silicon wafer and an epitaxial layer on the silicon wafer. The silicon wafer contains hydrogen that has a concentration profile including a first peak and a second peak. A hydrogen peak concentration of the first peak and a hydrogen peak concentration of the second peak are each not less than 1×1017 atoms/cm3.
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