METHOD FOR MANUFACTURING A SINGLE CRYSTAL BY SOLUTION GROWTH ENABLING TRAPPING OF PARASITIC CRYSTALS

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United States of America Patent

APP PUB NO 20210348297A1
SERIAL NO

17284936

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Abstract

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A method for manufacturing a single crystal may be by solution growth from a seed crystal, in a unit including a tank and a growth platform having a lower plate. The method may include: fastening the seed to the lower plate; introducing a crystallization solution of density dS into the tank; treating the solution in order to render it supersaturated; bringing the seed into contact with the supersaturated solution; rotating the platform until the single crystal is obtained. Before bringing the seed into contact with the supersaturated solution, the method may include forming, in the tank, of a zone for trapping parasitic crystals of density dC by introducing, into the tank, a liquid, immiscible with the growth solution, of density d>dS and dc, which forms with the growth solution an interface located below the lower plate.

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Patent Owner(s)

Patent OwnerAddress
COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVESFRANCE PARIS PARIS

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
BELOUET, Christian Sceaux, FR 25 171
PINTAULT, Bruno Monts, FR 4 67

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