Joint structure, semiconductor device, and method of manufacturing same

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United States of America Patent

PATENT NO 11764183
APP PUB NO 20210343676A1
SERIAL NO

17281984

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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Provided is a joint structure interposed between a semiconductor element and a substrate, the joint structure including: a Sn phase; Cu alloy particles containing P in an amount of 1 mass % or more and less than 7 mass %; and Ag particles, wherein the Cu alloy particles are each coated with a Cu6Sn5 layer, wherein the Ag particles are each coated with a Ag3Sn layer, wherein the Cu alloy particles and the Ag particles are at least partially bonded to each other through a Cu10Sn3 phase, wherein a total of addition amounts of the Cu alloy particles and the Ag particles is 25 mass % or more and less than 65 mass % with respect to the joint structure, and wherein a mass ratio of the addition amount of the Ag particles to the addition amount of the Cu alloy particles is 0.2 or more and less than 1.2.

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Patent Owner(s)

Patent OwnerAddress
MITSUBISHI ELECTRIC CORPORATION7-3 MARUNOUCHI 2-CHOME CHIYODA-KU TOKYO 1008310 ?1008310

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Tamura, Yoshio Tokyo, JP 55 431
Yamazaki, Koji Tokyo, JP 114 779

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