Dual-Port Semiconductor Memory and First In First Out (FIFO) Memory Having Electrically Floating Body Transistor

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United States of America Patent

APP PUB NO 20210327880A1
SERIAL NO

17363291

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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Multi-port semiconductor memory cells including a common floating body region configured to be charged to a level indicative of a memory state of the memory cell. The multi-port semiconductor memory cells include a plurality of gates and conductive regions interfacing with said floating body region. Arrays of memory cells and method of operating said memory arrays are disclosed for making a memory device.

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Patent Owner(s)

Patent OwnerAddress
ZENO SEMICONDUCTOR INC830 STEWART DRIVE #104 SUNNYVALE CA 94085

International Classification(s)

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  • 2021 Application Filing Year
  • H01L Class
  • 28775 Applications Filed
  • 15216 Patents Issued To-Date
  • 52.88 % Issued To-Date
Click to zoom InYear of Issuance% of Matters IssuedCumulative IssuancesYearly Issuances202120222023202420250255075100

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Widjaja, Yuniarto Cupertino, US 265 29705

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  • 20 Citation Count
  • H01L Class
  • 98.21 % this patent is cited more than
  • 4 Age
Citation count rangeNumber of patents cited in rangeNumber of patents cited in various citation count ranges1445612453334991910216201 - 1011 - 2021 - 3031 - 4041 - 5051 - 6061 - 7071 - 80010002000300040005000600070008000900010000110001200013000140001500016000

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