Method and system for producing silicon carbide ingot
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United States of America Patent
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Feb 28, 2023
Grant Date -
Oct 14, 2021
app pub date -
Nov 3, 2020
filing date -
Apr 9, 2020
priority date (Note) -
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Abstract
A silicon carbide ingot producing method is provided. The method produces a silicon carbide ingot in which an internal space of a reactor is depressurized and heated to create a predetermined difference in temperature between upper and lower portions of the internal space. The method produces a silicon carbide ingot in which a plane of a seed crystal corresponding to the rear surface of the silicon carbide ingot is lost minimally. Additionally, the method produces a silicon carbide ingot with few defects and good crystal quality.
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