VAPOR PHASE GROWTH METHOD
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United States of America Patent
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Oct 7, 2021
app pub date -
Jun 18, 2021
filing date -
Mar 1, 2018
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Provided is a vapor phase growth method according to an embodiment including loading a first substrate into a reaction chamber, generating a first mixed gas by mixing an indium containing gas, an aluminum containing gas, and a nitrogen compound containing gas, and forming a first indium aluminum nitride film on the first substrate by supplying the first mixed gas into the reaction chamber, the first substrate being rotated at a first rotation speed of 300 rpm or more.
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