METHOD FOR PRODUCING GALLIUM NITRIDE CRYSTAL

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United States of America Patent

APP PUB NO 20210285124A1
SERIAL NO

16328427

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Abstract

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There is provided a method for producing a gallium nitride crystal that can produce a gallium nitride crystal more efficiently, using liquid phase growth, the method for producing a gallium nitride crystal including: a step of adding at least one or more of a nitride of an alkali metal or an alkaline earth metal and a transition metal to metal gallium and iron nitride and performing heating in a nitrogen atmosphere to at least a reaction temperature at which the metal gallium reacts.

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Patent Owner(s)

Patent OwnerAddress
DEXERIALS CORPORATIONTOKYO JAPAN

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
AKIYAMA, Shinya Tokyo, JP 5 1
WATANABE, Makoto Tokyo, JP 386 3408

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