WAFER PROCESSING METHOD

Number of patents in Portfolio can not be more than 2000

United States of America Patent

APP PUB NO 20210280419A1
SERIAL NO

17190818

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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A method of processing a wafer includes preparing a wafer having a substrate and a silicon-containing film formed on the substrate; forming a hard mask on the silicon-containing film; forming a pattern on the hard mask by etching the hard mask; and etching the silicon-containing film using the hard mask on which the pattern is formed, wherein the hard mask has a first film formed on the silicon-containing film and containing tungsten, and a second film formed on the first film and containing zirconium or titanium and oxygen.

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Patent Owner(s)

Patent OwnerAddress
TOKYO ELECTRON LIMITED3-1 AKASAKA 5-CHOME MINATO-KU TOKYO 1076325

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
HAMADA, Yasuhiro Yamanashi, JP 34 264
KISHI, Yuutaro Yamanashi, JP 1 0
KOZUKA, Ryota Tokyo, JP 1 0
OKABE, Noriaki Tokyo, JP 6 7
SEINO, Takuya Tokyo, JP 30 278

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