FILM FORMING MATERIAL FOR LITHOGRAPHY, COMPOSITION FOR FILM FORMATION FOR LITHOGRAPHY, UNDERLAYER FILM FOR LITHOGRAPHY, AND METHOD FOR FORMING PATTERN

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United States of America Patent

APP PUB NO 20210278767A1
SERIAL NO

17255745

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Abstract

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An object of the present invention is to provide a film forming material for lithography that is applicable to a wet process, and is useful for forming a photoresist underlayer film excellent in heat resistance, etching resistance, embedding properties to a supporting material having difference in level, and film flatness; and the like. A film forming material for lithography comprising a compound having a group of the following formula (0):

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Patent Owner(s)

Patent OwnerAddress
MITSUBISHI GAS CHEMICAL COMPANY INC5-2 MARUNOUCHI 2-CHOME CHIYODA-KU TOKYO 1008324 ?1008324

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
CHIBA, Akifumi Kurashiki-shi, Okayama, JP 1 3
ECHIGO, Masatoshi Chiyoda-ku, Tokyo, JP 137 625
HORIUCHI, Junya Hiratsuka-shi, Kanagawa, JP 23 25
MAKINOSHIMA, Takashi Hiratsuka-shi, Kanagawa, JP 57 168
SUGITO, Ken Kurashiki-shi, Okayama, JP 8 26
UENO, Masayoshi Kita-ku, Niigata-shi, Niigata, JP 22 165
YAMADA, Kouichi Kurashiki-shi, Okayama, JP 91 1288

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