ETCHANT COMPOSITION
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United States of America Patent
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Issued Date -
Sep 9, 2021
app pub date -
Aug 15, 2019
filing date -
Aug 16, 2018
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Abstract
The present invention relates to an etchant composition, in particular to an aqueous masking layer etchant composition for use in the removal of tungsten-doped carbon masking layers from a surface of a substrate, such as a semiconductor wafer. The composition comprises (a) 10 to 40 wt. %, based on the total weight of the composition, of hydrogen peroxide; and (b) 0.1 to 2.0 wt. %, based on the total weight of the composition, of one or more corrosion inhibitors.
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