Nonvolatile memory apparatus for performing a read operation and a method of operating the same

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United States of America Patent

PATENT NO 11551752
APP PUB NO 20210249074A1
SERIAL NO

17245870

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Abstract

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A nonvolatile memory apparatus performs a plurality of read operations by using a plurality of read voltages. A first read operation is performed by applying a first read voltage to a memory cell. A second read operation is selectively performed based on whether a snap-back of the memory cell occurs during the first read operation. The second read operation is performed by applying a second read voltage having a higher voltage level than the first read voltage to the memory cell.

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Patent Owner(s)

Patent OwnerAddress
SK HYNIX INC2091 GYEONGCHUNG-DAERO BUBAL-EUB ICHEON-SI GYEONGGI-DO 17336

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Click to zoom InYear of Issuance% of Matters IssuedCumulative IssuancesYearly Issuances202120222023202420250255075100

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Cheon, Jun Ho Seoul, KR 20 46
Kang, Seok Joon Seoul, KR 21 76
Park, Moo Hui Icheon-si, KR 5 4

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Citation count rangeNumber of patents cited in rangeNumber of patents cited in various citation count ranges4617148211801 - 1011 - 2021 - 30025050075010001250150017502000225025002750300032503500375040004250450047505000

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