METHOD AND ARRANGEMENT FOR ACTUATING A METAL-OXIDE SEMICONDUCTOR FIELD-EFFECT TRANSISTOR
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United States of America Patent
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Issued Date -
Jul 8, 2021
app pub date -
May 15, 2019
filing date -
May 15, 2019
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Abstract
With a method and an actuation arrangement for actuating a MOSFET, in particular a wide-bandgap semiconductor MOSFET, a monitoring process is performed to determine whether the body diode of the MOSFET is electrically conducting or blocking. If the body diode is electrically conducting, the MOSFET is activated, and if the body diode is electrically blocking, the MOSFET is actuated in response to an actuation signal generated based on the drain-source voltage and the direction and intensity of the drain-source current of the MOSFET.
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