FORMING A PLANAR SURFACE OF A III-NITRIDE MATERIAL
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United States of America Patent
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Jul 1, 2021
app pub date -
Apr 3, 2017
filing date -
Apr 1, 2016
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Abstract
A method of making a semiconductor device, comprising: forming a plurality of semiconductor seeds of a first Ill-nitride material through a mask provided over a substrate; growing a second Ill-nitride semiconductor material on the seeds; planarizing the grown second semiconductor material to form a cohesive structure from the plurality of discrete base elements, said cohesive structure having a substantially planar upper surface.
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