SELECTIVE EPITAXIAL ATOMIC REPLACEMENT: PLASMA ASSISTED ATOMIC LAYER FUNCTIONALIZATION OF MATERIALS
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United States of America Patent
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Jun 24, 2021
app pub date -
Dec 18, 2020
filing date -
Dec 18, 2020
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Forming a two-dimensional Janus layer includes forming a layer of MX2, where M is a transition metal and X is a first chalcogen, plasma etching the layer of MX2 to remove X from the top layer, thereby yielding an etched layer, and contacting the etched layer with a second chalcogen Y. The second chalcogen is different than the first chalcogen, resulting in a two-dimensional Janus layer including MXY.
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