Chemical solution and method for treating substrate
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United States of America Patent
Stats
-
Oct 25, 2022
Grant Date -
Jun 17, 2021
app pub date -
Feb 24, 2021
filing date -
Sep 12, 2018
priority date (Note) -
In Force
status (Latency Note)
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Abstract
The present invention provides a chemical solution having excellent storage stability and excellent defect inhibition performance. The present invention also provides a method for treating a substrate. The chemical solution according to an embodiment of the present invention is a chemical solution used for removing a transition metal-containing substance on a substrate. The chemical solution contains one or more kinds of halogen oxoacids selected from the group consisting of a halogen oxoacid and a salt thereof and one or more kinds of specific anions selected from the group consisting of SO42−, NO3−, PO43−, and BO33−. In a case where the chemical solution contains one kind of the specific anion, a content of one kind of the specific anion is 5 ppb by mass to 1% by mass with respect to a total mass of the chemical solution. In a case where the chemical solution contains two or more kinds of the specific anions, a content of each of two or more kinds of the specific anions is equal to or lower than 1% by mass with respect to the total mass of the chemical solution, and a content of at least one of two or more kinds of the specific anions is equal to or higher than 5 ppb by mass with respect to the total mass of the chemical solution.
First Claim
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Family

- 15 United States
- 10 France
- 8 Japan
- 7 China
- 5 Korea
- 2 Other
Patent Owner(s)
Patent Owner | Address | |
---|---|---|
FUJIFILM CORPORATION | TOKYO 106-8620 |
International Classification(s)

- 2021 Application Filing Year
- C23F Class
- 184 Applications Filed
- 91 Patents Issued To-Date
- 49.46 % Issued To-Date
Inventor(s)
Inventor Name | Address | # of filed Patents | Total Citations |
---|---|---|---|
Seki, Hiroyuki | Haibara-gun, JP | 236 | 3423 |
# of filed Patents : 236 Total Citations : 3423 | |||
Sugimura, Nobuaki | Haibara-gun, JP | 12 | 10 |
# of filed Patents : 12 Total Citations : 10 | |||
Takahashi, Tomonori | Haibara-gun, JP | 121 | 1303 |
# of filed Patents : 121 Total Citations : 1303 |
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Patent Citation Ranking
- 0 Citation Count
- C23F Class
- 0 % this patent is cited more than
- 3 Age
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Fee | Large entity fee | small entity fee | micro entity fee | due date |
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3.5 Year Payment | $1600.00 | $800.00 | $400.00 | Apr 25, 2026 |
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