Pillar-last methods for forming semiconductor devices

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United States of America Patent

PATENT NO 11631630
APP PUB NO 20210166996A1
SERIAL NO

17175006

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Abstract

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Semiconductor devices having one or more vias filled with an electrically conductive material are disclosed herein. In one embodiment, a semiconductor device includes a semiconductor substrate having a first side, a plurality of circuit elements proximate to the first side, and a second side opposite the first side. A via can extend between the first and second sides, and a conductive material in the via can extend beyond the second side of the substrate to define a projecting portion of the conductive material. The semiconductor device can have a tall conductive pillar formed over the second side and surrounding the projecting portion of the conductive material, and a short conductive pad formed over the first side and electrically coupled to the conductive material in the via.

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Patent Owner(s)

Patent OwnerAddress
MICRON TECHNOLOGY INC8000 SOUTH FEDERAL WAY BOISE ID 83716-9632

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chandolu, Anilkumar Boise, US 65 216
Huang, Wayne H Boise, US 17 85
Vadhavkar, Sameer S Boise, US 34 385

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