SEMICONDUCTOR MANUFACTURING APPARATUS

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United States of America Patent

APP PUB NO 20210140048A1
SERIAL NO

17153281

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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A method of forming a material layer includes providing a substrate into a reaction chamber, providing a source material onto a substrate, the source material being a precursor of a metal or semimetal having a ligand, providing an ether-based modifier on the substrate, purging an inside of the reaction chamber, and reacting a reaction material with the source material to form the material layer.

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Patent Owner(s)

Patent OwnerAddress
SAMSUNG ELECTRONICS CO LTDSUWON-SI

International Classification(s)

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
KIM, Hyun-jun Seoul, KR 73 781
KIM, Youn-soo Yongin-si, KR 48 272
LEE, Jin-sun Seongnam-si, KR 14 140
LEE, Yong-jae Incheon, KR 67 464
LIM, Han-jin Seoul, KR 51 420
MOON, Sun-min Yongin-si, KR 11 67
OH, Se-hoon Hwaseong-si, KR 40 1031

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