GAS MIXING SYSTEM FOR SEMICONDUCTOR FABRICATION

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United States of America

APP PUB NO 20210113972A1
SERIAL NO

16657016

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Abstract

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A gas mixing system for semiconductor fabrication includes a mixing block. The mixing block defines a gas mixing chamber, a first gas channel fluidly coupled to the gas mixing chamber at a first exit location, and a second gas channel fluidly coupled to the gas mixing chamber at a second exit location, wherein the first exit location is diametrically opposite the second exit location relative to the gas mixing chamber and the second gas channel has a bend of 90 degrees or less between an entrance of the second gas channel and the second exit location.

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Patent Owner(s)

Patent OwnerAddress
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LIMITEDNO 8 LI-HSIN ROAD 6 HSIN-CHU SCIENCE PARK HSIN-CHU 300-77

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
HSIEH, Chin Shen Hsinchu City, TW 2 0
LIN, Ming Shing Hsinchu County, TW 3 2

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