SEMICONDUCTOR SUITABLE FOR USE IN PHOTOANODE
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United States of America
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Issued Date -
Apr 15, 2021
app pub date -
Oct 9, 2020
filing date -
Oct 9, 2020
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Abstract
A composition of matter includes an n-type semiconductor. At least a portion of the semiconductor has the crystal structure of the chemical compound represented by FeWO4. The portion of the semiconductor having the crystal structure of FeWO4 includes iron and tungsten. A photoanode can have a light-absorbing layer that includes or consists of the semiconductor. A solar fuels generator can include the photoanode.
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