Three-dimensional memory device and manufacturing method thereof
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United States of America Patent
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Sep 14, 2021
Grant Date -
Apr 1, 2021
app pub date -
Nov 10, 2019
filing date -
Sep 26, 2019
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Abstract
A three-dimensional (3D) memory device and a manufacturing method thereof are provided. The method includes the following steps. An alternating dielectric stack is formed on a substrate. An opening is formed penetrating the alternating dielectric stack in a thickness direction of the substrate. A blocking layer is formed on a sidewall of the opening. A trapping layer is formed in the opening, and the trapping layer is formed on the blocking layer. The trapping layer includes a lower portion and an upper portion disposed above the lower portion. A thickness of the upper portion in a horizontal direction is greater than a thickness of the lower portion in the horizontal direction. The thickness distribution of the trapping layer is modified for improving the electrical performance of the 3D memory device.
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