PATTERNED SHIELDING STRUCTURE

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United States of America Patent

APP PUB NO 20210090988A1
SERIAL NO

16830555

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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A patterned shielding structure is disposed between an inductor structure and a substrate. The patterned shielding structure includes a shielding layer and a first stacked structure. The shielding layer extends along a plane. The first stacked structure is stacked, along a first direction, on the shielding layer. The first direction is perpendicular to the plane. The first stacked structure has a crossed shape and is configured to enhance a shielding effect.

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Patent Owner(s)

Patent OwnerAddress
REALTEK SEMICONDUCTOR CORPORATIONHSINCHU

International Classification(s)

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
CHAN, Ka-Un Hsinchu, TW 81 95
SHIH, Kuan-Yu Hsinchu, TW 17 16
TSAI, Chih-Yu Hsinchu, TW 14 53
YEN, Hsiao-Tsung Hsinchu, TW 234 1532

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Patent Citation Ranking

  • 2 Citation Count
  • H01L Class
  • 52.76 % this patent is cited more than
  • 4 Age
Citation count rangeNumber of patents cited in rangeNumber of patents cited in various citation count ranges1445612453334991910216201 - 1011 - 2021 - 3031 - 4041 - 5051 - 6061 - 7071 - 80010002000300040005000600070008000900010000110001200013000140001500016000

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