H-3 silicon carbide PN-type radioisotopic battery and manufacturing method of the same

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United States of America Patent

PATENT NO 11769603
APP PUB NO 20210090754A1
SERIAL NO

16962842

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Abstract

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The present invention discloses an H-3 silicon carbide PN-type radioisotopic battery and a manufacturing method therefor. The radioisotopic battery has a structure including, from bottom to top, an N-type ohmic contact electrode, an N-type highly doped SiC substrate, an N-type SiC epitaxial layer, and a P-type SiC epitaxial layer. A P-type SiC ohmic contact doped layer is disposed on a partial upper area of the P-type SiC epitaxial layer, a P-type ohmic contact electrode is disposed on top of the P-type SiC ohmic contact doped layer, a SiO2 passivation layer is disposed on an upper area of the P-type SiC epitaxial layer where the P-type ohmic contact doped layer is removed, and an H-3 radioisotope source is provided on the top of the SiO2 passivation layer.

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Patent Owner(s)

Patent OwnerAddress
CHANG'AN UNIVERSITY710064 MIDDLE SECTION OF SOUTH 2ND RING ROAD BEILIN DISTRICT XI'AN CITY SHAANXI PROVINCE XI'AN CITY SHAANXI PROVINCE 710064

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Wang, Xiaoyan Xi'an, CN 104 1242
Zhang, Lin Xi'an, CN 453 3838
Zhu, Liya Xi'an, CN 3 2

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