MEMORY SYSTEM STORAGE DEVICE WITH PATH CIRCUIT

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United States of America Patent

APP PUB NO 20210074332A1
SERIAL NO

16877752

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Abstract

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A memory system and storage device are provided, including: an auxiliary power device having at least one capacitor, wherein the at least one capacitor has a first path for leakage current; a charging circuit including a switch connected to the auxiliary power device; and a state determining circuit connected to the auxiliary power device, wherein the state determining circuit includes a path circuit connected in parallel with the at least one capacitor to form a second path having at least one of a resistance lower than a resistance of the first path or a current source.

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Patent Owner(s)

Patent OwnerAddress
SAMSUNG ELECTRONICS CO LTDSUWON-CITY KYUNGKI-DO 441-370

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
LEE, WOOSUNG Seoul, KR 28 276
Lim, Hyoungtaek Seoul, KR 3 4
Ryu, Chunghyun Hwaseong-Si, KR 10 12

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