CRYSTALLIZATION MONITORING METHOD, LASER ANNEALING APPARATUS, AND LASER ANNEALING METHOD
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United States of America Patent
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Mar 4, 2021
app pub date -
Aug 24, 2018
filing date -
Sep 6, 2017
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Abstract
A set of film thickness calculation values of constituent films of a lamination structure is calculated at a set of non-treating regions unexposed to laser light, the non-treating regions residing close to a set of treating regions to be annealed, and a set of crystallization levels of the set of treating regions is calculated by a fitting between a second spectral spectrum measurement values of the set of treating regions and a second spectral spectrum calculation values computed from the set of film thickness calculation values, for use to adjust a set of laser energies of laser light to be irradiated on a TFT substrate to be laser annealed at the next time.
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