Systems and methods for combined reflectometry and photoelectron spectroscopy

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United States of America Patent

PATENT NO 11536674
APP PUB NO 20210055237A1
SERIAL NO

17079243

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Abstract

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Methods and systems for measuring structural and material characteristics of semiconductor structures based on combined x-ray reflectometry (XRR) and x-ray photoelectron spectroscopy (XPS) are presented herein. A combined XRR and XPS system includes an x-ray illumination source and x-ray illumination optics shared by both the XRR and XPS measurement subsystems. This increases throughput and measurement accuracy by simultaneously collecting XRR and XPS measurement data from the same area of the wafer. A combined XRR and XPS system improves measurement accuracy by employing XRR measurement data to improve measurements performed by the XPS subsystem, and vice-versa. In addition, a combined XRR and XPS system enables simultaneous analysis of both XRR and XPS measurement data to more accurately estimate values of one of more parameters of interest. In a further aspect, any of measurement spot size, photon flux, beam shape, beam diameter, and illumination energy are independently controlled.

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Patent Owner(s)

Patent OwnerAddress
KLA-TENCOR CORPORATIONONE TECHNOLOGY DRIVE MILPITAS CA 95035

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Khodykin, Oleg Santa Cruz, US 24 328
Kuznetsov, Alexander Austin, US 44 790
Shchegrov, Andrei V Campbell, US 92 2359

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