DEVICES, SYSTEMS AND METHODS UTILIZING AN IMPROVED OPTICAL ABSORPTION MODEL FOR DIRECT-GAP SEMICONDUCTORS
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
N/A
Issued Date -
Feb 25, 2021
app pub date -
Aug 21, 2020
filing date -
Aug 22, 2019
priority date (Note) -
Published
status (Latency Note)
Importance
Abstract
A method for determining a characteristic of a direct-gap semiconductor comprises measuring at least one optical constant of a first sample of a direct-gap semiconductor with an optical spectrometer, calculating an estimated value of an optical parameter of the first sample of the direct-gap semiconductor based on fitting the model αg(ln(1+e(hν-Eg)/(pEu))/ln(2))p to an optical absorption curve based on the at least one optical constant, obtaining at least one second value of the optical parameter, and calculating an estimated characteristic of the direct-gap semiconductor from the estimated value of the optical parameter and the obtained second value of the optical parameter. A method for determining a temperature of a direct-gap semiconductor and a system for determining a characteristic of a direct-gap semiconductor are also disclosed.
First Claim
Family
International Classification(s)
- [Classification Symbol]
- [Patents Count]
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully