Mask and method for forming the same

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United States of America Patent

PATENT NO 11137672
APP PUB NO 20210018828A1
SERIAL NO

16512795

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Abstract

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A method of forming a mask includes forming a reflective multilayer over a substrate; forming a capping layer over the reflective multilayer, in which the capping layer includes a ruthenium-containing material and a low carbon solubility material that has a carbon solubility lower than a carbon solubility of the ruthenium-containing material; forming an absorption layer over the capping layer; and etching the absorption layer until exposing the capping layer.

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Patent Owner(s)

Patent OwnerAddress
TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD8 LI-HSIN RD 6 HSINCHU SCIENCE PARK HSINCHU 300-78

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Lin, Yun-Yue Hsinchu, TW 77 363

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