Method of manufacturing a template wafer

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 11557505
APP PUB NO 20210013090A1
SERIAL NO

17028503

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Abstract

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A method for manufacturing a semiconductor device includes implanting gas ions in a donor wafer and bonding the donor wafer to a carrier wafer to form a compound wafer. The method also includes subjecting the compound wafer to a thermal treatment to cause separation along a delamination layer and growing an epitaxial layer on a portion of separated compound wafer to form a semiconductor device layer. The method further includes cutting the carrier wafer.

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Patent Owner(s)

Patent OwnerAddress
INFINEON TECHNOLOGIES AGAM CAMPEON 1-15 NEUBIBERG 85579

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Berger, Rudolf Regensburg, DE 85 942
Lehner, Rudolf Laaber, DE 17 187
Lehnert, Wolfgang Lintach, DE 51 286
Metzger-Brueckl, Gerhard Geisenfeld, DE 16 144
Ruhl, Guenther Regensburg, DE 65 796

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