MULTI-LEVEL PHASE CHANGE MEMORY CELLS AND METHOD OF MAKING THE SAME
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United States of America Patent
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Issued Date -
Dec 31, 2020
app pub date -
Jun 26, 2019
filing date -
Jun 26, 2019
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Abstract
A phase change memory cell includes a first electrode, a second electrode located over the first electrode, a vertical pillar structure located between the first and second electrodes, the pillar structure containing a first phase change memory (PCM) material portion, a second PCM material portion and an intermediate electrode located between the first PCM material portion and the second PCM material portion, and a resistive liner containing a first segment electrically connected in parallel to the first PCM material portion between the first electrode and the intermediate electrode, and a second segment electrically connected in parallel to the second PCM material portion between the intermediate electrode and the second electrode. The first PCM material portion has a different electrical resistance than the second PCM material portion, and the first segment of the resistive liner has a different electrical resistance than the second segment of the resistive liner.
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