APPARATUS AND METHOD OF MODULATING THRESHOLD VOLTAGE FOR FIN FIELD EFFECT TRANSISTOR (FINFET) AND NANOSHEET FET
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United States of America Patent
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Issued Date -
Dec 24, 2020
app pub date -
Sep 20, 2019
filing date -
Jun 18, 2019
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Abstract
Apparatus and method are provided. The apparatus includes at least one field effect transistor (FET), wherein the at least one FET comprises at least one gate overlaying at least one non-linear fin, wherein the non-linear fin is formed via modulating a mandrel by producing cut-outs in the mandrel via optical proximity correction (OPC). The method includes receiving a semiconductor wafer, forming source and drain areas for each of at least one FET on the semiconductor wafer; and forming at least one gate overlaying at least one non-linear fin in each of the at least one FET, wherein the non-linear fin is formed via modulating a mandrel by producing cut-outs in the mandrel via OPC.
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