Importance

Loading Importance Indicators...

Abstract

The invention relates to a method for fabricating a group 13 nitride semiconductor substrate (5) comprising the following steps of: a) deposition of at least one monocrystalline layer (5b) by epitaxial growth (10) on a starting substrate, said monocrystalline laser having an upper face having structural defects that do not pass all the way through (6); b) deposition, by epitaxial growth (30, 35), of at least one continuous polycrystalline layer (5c); c) separation (40) of the starting substrate (1); d) rectification (50) by removing at least one layer thickness corresponding to the thickness of the one or more deposited polycrystalline lasers (5c), the one or more polycrystalline layers (5c) thus being removed with the exception of the zones of the subjacent monocrystalline layer (5b) corresponding to the structural defects that do not pass all the way through (6) that said one or more polycrystalline layers (5c) fill.

Loading the Abstract Image...

First Claim