MEASURING HEIGHT DIFFERENCE IN PATTERNS ON SEMICONDUCTOR WAFERS

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United States of America Patent

APP PUB NO 20200380668A1
SERIAL NO

16995077

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Abstract

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An improved technique for determining height difference in patterns provided on semiconductor wafers uses real measurements (e.g., measurements from SEM images) and a height difference determination model. In one version of the model, a measurable variable of the model is expressed in terms of a function of a change in depth of shadow (i.e. relative brightness), wherein the depth of shadow depends on the height difference as well as width difference between two features on a semiconductor wafer. In another version of the model, the measurable variable is expressed in terms of a function of a change of a measured distance between two characteristic points on the real image of a periodic structure with respect to a change in a tilt angle of a scanning electron beam.

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Patent Owner(s)

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APPLIED MATERIALS INC3050 BOWERS AVENUE SANTA CLARA CA 95054

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Avniel, Yan Rehovot, IL 4 3
Baram, Mor Nes-Ziona, IL 6 6
Girmonsky, Doron Raanana, IL 15 214
Khristo, Sergey Ashdod, IL 5 5
Kris, Roman Jerusalem, IL 19 35
Levi, Shimon Kiryat -Tivon, IL 10 57
Schwarzband, Ishai Or-Yehuda, IL 25 136

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