BLANKMASK AND PHOTOMASK

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United States of America Patent

APP PUB NO 20200379337A1
SERIAL NO

15931380

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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A blankmask includes a transparent substrate, a phase-shift film, and a light-shielding film. The phase-shift film for example has a transmissivity of 30˜100%, and in this case the light-shielding film has a thickness of 40˜70 nm and a composition ratio of 30˜80 at % chromium, 10˜50 at % nitrogen, 0˜35% oxygen, and 0˜25% carbon. A structure where the light-shielding film and the phase-shift film are stacked has an optical density of 2.5˜3.5. Thus, CD deviation is minimized when the light-shielding film is etched in a manufacturing process for a photomask.

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Patent Owner(s)

Patent OwnerAddress
S&S TECH CO LTD42 HOSANDONG-RO DALSEO-GU DAEGU 42714

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
CHOI, Min-Ki Daegu-si, KR 10 27
LEE, Jong-Hwa Daegu-si, KR 104 1238
SHIN, Cheol Daegu-si, KR 96 405
SHIN, Seung-Hyup Daegu-si, KR 7 7
YANG, Chul-Kyu Daegu-si, KR 25 37

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