Integrated channel diode

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 11444191
APP PUB NO 20200373424A1
SERIAL NO

16990284

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Importance

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Abstract

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A semiconductor device includes a vertical drift region over a drain contact region, abutted on opposite sides by RESURF trenches. A split gate is disposed over the vertical drift region. A first portion of the split gate is a gate of an MOS transistor and is located over a body of the MOS transistor over a first side of the vertical drift region. A second portion of the split gate is a gate of a channel diode and is located over a body of the channel diode over a second, opposite, side of the vertical drift region. A source electrode is electrically coupled to a source region of the channel diode and a source region of the MOS transistor.

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Patent Owner(s)

Patent OwnerAddress
TEXAS INSTRUMENTS INCORPORATEDP O BOX 655474 MAIL STATION 3999 DALLAS TX 75265-5474 75265-5474

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Kawahara, Hideaki Plano, US 57 546
Kocon, Christopher Boguslaw Mountain Top, US 93 1697
Molloy, Simon John Allentown, US 47 604
Neilson, John Manning Savidge Norristown, US 23 193

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