SEMICONDUCTOR APPARATUS WITH HIGH-STABILITY BONDING LAYER AND PRODUCTION METHOD THEREOF
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United States of America Patent
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Issued Date -
Nov 19, 2020
app pub date -
Aug 4, 2020
filing date -
Feb 9, 2018
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Abstract
In an embodiment, a semiconductor apparatus comprises: a semiconductor chip, a substrate, and a bonding layer located between the semiconductor chip and the substrate that bonds the semiconductor chip and the substrate, wherein the bonding layer comprises sintered metal that comprises a plurality of voids, and wherein at least a portion of the plurality of voids are filled with a specific material having fluidity at a temperature higher than a preset temperature and is curable after being heated and melted.
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