ELECTRICAL FUSE FORMATION DURING A MULTIPLE PATTERNING PROCESS

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United States of America Patent

APP PUB NO 20200335435A1
SERIAL NO

16918053

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Abstract

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Interconnect structures and methods of fabricating an interconnect structure. A first interconnect and a second interconnect extend in a first direction in a interlayer dielectric layer and are spaced apart from each other. A third interconnect is arranged in the interlayer dielectric layer to connect the first interconnect with the second interconnect. The first interconnect and the second interconnect have a first width, and the third interconnect has a second width that is less than the first width.

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Patent Owner(s)

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GLOBALFOUNDRIES U S INC2600 GREAT AMERICA WAY SANTA CLARA CA 95054

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chae, Moosung M Englewood Cliffs, US 12 46
Liu, Jinping Ballston Lake, US 60 134
Shu, Jiehui Clifton Park, US 101 232
Yin, Haizhou Clifton Park, US 244 3095
Zang, Hui Guilderland, US 449 2569
Zhang, Xiaoqiang Rexford, US 74 186

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