METHODS FOR DEPOSITING THIN FILMS COMPRISING INDIUM NITRIDE BY ATOMIC LAYER DEPOSITION

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United States of America Patent

APP PUB NO 20200335342A1
SERIAL NO

16908241

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Abstract

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Atomic layer deposition (ALD) processes for forming thin films comprising InN are provided. The thin films may find use, for example, in light-emitting diodes.

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Patent OwnerAddress
ASM INTERNATIONAL N V1322 AP ALMERE

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Haukka, Suvi Helsinki, FI 94 21518
Niskanen, Antti Helsinki, FI 72 10468
Pore, Viljami J Helsinki, FI 66 9755

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