HOLE FORMING METHOD, MEASURING APPARATUS AND CHIP SET

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United States of America Patent

APP PUB NO 20200332434A1
SERIAL NO

16905035

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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A pore forming method in which a pore is formed in such a way that a first voltage is applied between electrodes that are disposed with a film in an electrolytic solution therebetween; a second voltage, which is lower than the first voltage, is applied between the electrodes; a current that flows between the electrodes owing to the application of the second voltage is measured; it is judged whether a value of a current is equal to or larger than a predefined threshold; and if the value of the current is smaller than the threshold, the above sequence is repeated until a pore is formed. In this case, the second voltage is a voltage that makes the value (IPF) of the current flowing through the film practically 0. With the use of the above method, a nanopore is formed in the film simply, easily, and accurately.

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Patent Owner(s)

Patent OwnerAddress
HITACHI LTDTOKYO JAPAN TOKYO METROPOLIS

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
AKAHORI, Rena Tokyo, JP 20 65
TAKEDA, Kenichi Tokyo, JP 148 1821
YANAGI, Itaru Tokyo, JP 35 171

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