METHODS OF FABRICATING SEMICONDUCTOR STRUCTURES INCLUDING CAVITIES FILLED WITH A SACRIFICIAL MATERIAL
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
N/A
Issued Date -
Oct 22, 2020
app pub date -
Jul 6, 2020
filing date -
Jun 27, 2013
priority date (Note) -
Published
status (Latency Note)
Importance
Abstract
Methods of forming semiconductor structures comprising one or more cavities, which may be used in the formation of microelectromechanical system (MEMS) transducers, involve forming one or more cavities in a first substrate, providing a sacrificial material within the one or more cavities, bonding a second substrate over a surface of the first substrate, forming one or more apertures through a portion of the first substrate to the sacrificial material, and removing the sacrificial material from within the one or more cavities. Structures and devices are fabricated using such methods.
First Claim
Family
International Classification(s)
- [Classification Symbol]
- [Patents Count]
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully