INTEGRATED SENSOR OF IONIZING RADIATION AND IONIZING PARTICLES
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United States of America Patent
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Issued Date -
Oct 15, 2020
app pub date -
Oct 22, 2018
filing date -
Oct 27, 2017
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Abstract
This disclosure provides a semiconductor sensor of ionizing radiation and/or ionizing particles with a backside bias electrode and a backside junction for completely depleting the semiconductor substrate up to carrier collection regions each connected to a respective collection electrode of carriers generated by ionization in the substrate. Differently from prior sensors, the sensor of this disclosure has an intermediate semiconductor layer formed upon the substrate, having a greater doping concentration than the doping concentration of the substrate and a doping of a same type. In this intermediate layer, buried doped regions of opposite type one separated from the other are formed for shielding superficial regions in which readout circuits are defined.
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