Importance

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Abstract

Provided is an ultraviolet light emitting device having high quality and high reliability that prevents deterioration in electrical characteristics caused by a photochemical reaction of a non-bonding amorphous fluororesin, decomposition or the like of the amorphous fluororesin, and peeling off of the amorphous fluororesin. A nitride semiconductor ultraviolet light emitting device 1 includes a base 30, a nitride semiconductor ultraviolet light emitting element flip-chip mounted on the base 30, and an amorphous fluororesin 40 that is in direct contact with the nitride semiconductor ultraviolet light emitting element for covering. The nitride semiconductor ultraviolet light emitting element includes a sapphire substrate 11, a plurality of AlGaN-based semiconductor layers 12 laminated on the main surface of the sapphire substrate 11, an n-electrode 13, and a p-electrode 14. A terminal functional group of the amorphous fluororesin 40 is a perfluoroalkyl group, and the amorphous fluororesin 40 enters into depressions formed on the side surface of the sapphire substrate 11.

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First Claim