3-dimensional NOR string arrays in segmented stacks

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United States of America Patent

PATENT NO 11180861
APP PUB NO 20200318248A1
SERIAL NO

16859960

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Abstract

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A memory structure formed above a semiconductor substrate includes two or more modules each formed on top of each other separated by a layer of global interconnect conductors. Each memory module may include a 3-dimensional array of memory transistors organized as NOR array strings. Each 3-dimensional array of memory transistors is provided vertical local word lines as gate electrodes to the memory transistors. These vertical local word lines are connected by the layers of global interconnect conductors below and above the 3-dimensional array of memory transistors to circuitry formed in the semiconductor substrate.

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Patent Owner(s)

Patent OwnerAddress
SUNRISE MEMORY CORPORATION225 CHARCOT AVENUE SAN JOSE CA 95131

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chien, Wu-Yi San Jose, US 7 185
Harari, Eli Saratoga, US 121 4591

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