Master Alloy for Sputtering Target and Method for Producing Sputtering Target

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United States of America Patent

APP PUB NO 20200308692A1
SERIAL NO

16902382

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Abstract

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Provided is a master alloy for a sputtering target, wherein, when elements constituting the master alloy are following X1, X2, Y1, Y2, Y2, and Y3; specifically, where X1 is one or two types of Ta or W; X2 is at least one type of Ru, Mo, Nb or Hf; Y1 is one or two types of Cr or Mn; Y2 is one or two types of Co or Ni; and Y3 is one or two types of Ti or V, the master alloy comprises any one combination of X1-Y1, X1-Y2, X1-Y3, X2-Y1, and X2-Y2 of the foregoing constituent elements. This consequently yields superior effects of being able to obtain a sintered sputtering target with few defects and having a high-density and uniform alloy composition, and, by using this target, to realize the deposition of an alloy barrier film with uniform quality and few particles at a high speed.

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Patent Owner(s)

Patent OwnerAddress
JX NIPPON MINING & METALS CORPORATION1-2 OTEMACHI 1-CHOME CHIYODA-KU TOKYO 1008164

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Asano, Takayuki Ibaraki, JP 14 63
Oda, Kunihiro Ibaraki, JP 32 319

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