having 1T crystal structure

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 11525189
APP PUB NO 20200291540A1
SERIAL NO

16675351

Stats

ATTORNEY / AGENT: (SPONSORED)

Importance

Loading Importance Indicators... loading....

Abstract

See full text

Provided is a method of manufacturing MoS2 having a 1T crystal structure. The method includes performing phase transition from a 2H crystal structure of MoS2 to the 1T crystal structure by reacting MoS2 having the 2H crystal structure with CO gas. The phase transition includes annealing the MoS2 having the 2H crystal structure in an atmosphere including CO gas.

Loading the Abstract Image... loading....

First Claim

See full text

Family

Loading Family data... loading....

Patent Owner(s)

Patent OwnerAddress
SEOUL NATIONAL UNIVERSITY R&DB FOUNDATION1 GWANAK-RO GWANAK-GU SEOUL 08826

International Classification(s)

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Joo, Won Hyo Seoul, KR 1 0
Joo, Young Chang Seoul, KR 9 19
Kim, Ji Yong Seoul, KR 30 179
Nam, Dae Hyun Gyeongsangnam-do, KR 20 36

Cited Art Landscape

Load Citation

Patent Citation Ranking

Forward Cite Landscape

Load Citation

Maintenance Fees

Fee Large entity fee small entity fee micro entity fee due date
3.5 Year Payment $1600.00 $800.00 $400.00 Jun 13, 2026
7.5 Year Payment $3600.00 $1800.00 $900.00 Jun 13, 2030
11.5 Year Payment $7400.00 $3700.00 $1850.00 Jun 13, 2034
Fee Large entity fee small entity fee micro entity fee
Surcharge - 3.5 year - Late payment within 6 months $160.00 $80.00 $40.00
Surcharge - 7.5 year - Late payment within 6 months $160.00 $80.00 $40.00
Surcharge - 11.5 year - Late payment within 6 months $160.00 $80.00 $40.00
Surcharge after expiration - Late payment is unavoidable $700.00 $350.00 $175.00
Surcharge after expiration - Late payment is unintentional $1,640.00 $820.00 $410.00