High-frequency amplifier

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United States of America Patent

PATENT NO 10951174
APP PUB NO 20200274497A1
SERIAL NO

16304708

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Abstract

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A transistor (2) is provided on a surface of a semiconductor substrate (1). First and second wirings (10,11) are provided on the surface of the semiconductor substrate (1) and sandwich the transistor (2). Plural wires (20) pass over the transistor (2) and are connected to the first and second wirings (10,11). A sealing material (21) sealing the transistor (2), the first and second wirings (10,11), and the plural wires (20). The sealing material (21) contains a filler (21a). An interval distance between the plural wires (20) is smaller than a particle diameter of the filler (21a). The sealing material (21) does not intrude into a space between the plural wires (20) and the transistor (2) so that a cavity (22) is formed.

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Patent Owner(s)

Patent OwnerAddress
MITSUBISHI ELECTRIC CORPORATIONCHIYODA-KU TOKYO 100-8310

International Classification(s)

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Matsui, Toshio Tokyo, JP 31 369

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